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USB6B1RL Fiches technique(PDF) 2 Page - STMicroelectronics |
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USB6B1RL Fiches technique(HTML) 2 Page - STMicroelectronics |
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2 / 9 page ![]() Characteristics USB6B1 2/9 1 Characteristics Table 1. Absolute maximum ratings Symbol Parameter Value Unit VPP Peak pulse voltage IEC61000-4-2 contact discharge IEC61000-4-2 air discharge MIL STD883C-Method 30 15-6 8 15 4 kV PPP Peak pulse power 8/20 µs 500 W IPP Peak pulse current 8/20 µs 25 A 2/10 µs 40 Tstg Top Storage temperature range Operating temperature range - 55 to + 150 - 40 to + 85 ° C ° C TL Lead solder temperature (10 s duration) 260 ° C Table 2. Electrical characteristics (Tamb = 25° C) Symbol Parameter Value Unit Min Typ Max VBR Breakdown voltage between VBUS and GND IR = 1 mA 6 V IRM Leakage current VRM = 5.25 V 10 µA C Capacitance between pins D+ and D- VOSC = 30 mV, F = 1 MHz, VR = 0 V VCC not connected 15 pF Capacitance between pins D+(or D-) and GND VOSC = 30 mV, F = 1 MHz, VR = 5 V VCC = 5 V 25 pF |
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