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STG4159BJR Fiches technique(PDF) 6 Page - STMicroelectronics

No de pièce STG4159BJR
Description  Low voltage 0.3Ω max single SPDT switch with break-before-make feature and 10kV contact ESD protection
PDF  18 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STG4159BJR Fiches technique(HTML) 6 Page - STMicroelectronics

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Electrical characteristics
STG4159
6/18
3
Electrical characteristics
Table 6.
DC specifications
Symbol
Parameter
Test conditions
Value
Unit
VCC (V)
VL (V)
TA = 25°C
-40 to 85°C
Min. Typ. Max.
Min. Max.
VIH
High level input
voltage
1.65-4.3
1.65-1.95
1.25
1.25
V
2.3-2.7
1.75
1.75
3.0-3.6
2.35
2.35
4.3
2.8
2.8
VIL
Low level input
voltage
1.65-4.3
1.65-1.95
0.6
0.6
V
2.3-2.7
0.8
0.8
3.0-3.6
1.05
1.05
4.3
1.5
1.5
RON
ON resistance
1.8
1.65-4.3
VS=0V to VCC
IS=100mA
0.49
0.65
0.85
Ω
2.25
0.30
0.40
0.50
3
0.25
0.35
0.45
3.7
0.22
0.32
0.42
4.3
0.21
0.30
0.40
∆RON
ON resistance
match between
channels (1)
1.8
1.65-4.3
VS=0V to VCC
IS=100mA
5
m
Ω
2.25
3
33
3.7
3
4.3
3
RFLAT
ON resistance
flatness (2)
1.8
1.65 - 4.3
VS=0V to VCC
IS=100mA
300
400
450
m
Ω
2.5
130
170
230
3
90
120
170
3.7
90
120
170
4.3
90
120
170
IOFF
Sn OFF state
leakage current
1.65-4.3 1.65 - 4.3
VS=0 to VCC
VD=0 to VCC
-20
20
-300
300
nA
ION
Sn ON state
leakage current
1.65-4.3 1.65 - 4.3
VS=0 to VCC
VD=Open
-20
20
-100
100
nA
ID
D ON state
leakage current
1.65-4.3 1.65 - 4.3
VS=Open
VD=0 to VCC
-20
20
-100
100
nA



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