STTH16003 datasheet(4/7 Pages) STMICROELECTRONICS

4 / 7 page

Characteristics

STTH16003

4/7

Figure 9.

Forward recovery time versus dIF/dt (90% confidence, per diode)

Figure 5.

Reverse recovery time versus

dIF/dt (90% confidence, per diode)

Figure 6.

Softness factor (tb/ta) versus dIF/dt

(typical values, per diode)

Figure 7.

Relative variation of dynamic

parameters versus junction

temperature (reference: Tj = 125°C)

Figure 8.

Transient peak forward voltage

versus dIF/dt (90% confidence, per

diode)

100 150 200 250 300 350 400 450 500

100

120

140

160

180

200

220

240

trr(ns)

VR=200V

Tj=125°C

IF=2xIF(av)

IF=IF(av)

IF=0.5xIF(av)

dIF/dt(A/µs)

100 150 200 250 300 350 400 450 500

0.0

0.1

0.2

0.3

0.4

0.5

0.6

S factor

VR=200V

Tj=125°C

dIF/dt(A/µs)

100

125

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

IRM

S factor

Tj(°C)

100 150 200 250 300 350 400 450 500

VFP(V)

IF=IF(av)

Tj=125°C

dIF/dt(A/µs)

100 150 200 250 300 350 400 450 500

100

200

300

400

500

600

700

800

900

1000

tfr(ns)

VFR=1.1 x VF max.

IF=IF(av)

Tj=125°C

dIF/dt(A/µs)

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