STD6NF10 datasheet(2/9 Pages) STMICROELECTRONICS

No de pièce	STD6NF10

Description	N-CHANNEL 100V - 0.22 ohm - 6A IPAK/DPAK LOW GATE CHARGE STripFET™ POWER MOSFET

PDF	9 Pages

Scroll/Zoom	100%

Fabricant	STMICROELECTRONICS [STMicroelectronics]

Site Internet	http://www.st.com

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2 / 9 page

STD6NF10

2/9

THERMAL DATA

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

ON (1)

DYNAMIC

Rthj-case

Rthj-amb

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Maximum Lead Temperature For Soldering Purpose

Max

Typ

100

300

°C/W

°C

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

100

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating TC = 125°C

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 20V

±1

µA

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS(th)

Gate Threshold Voltage

VDS = VGS

ID = 250 µA

RDS(on)

Static Drain-source On

Resistance

VGS = 10 V

ID = 3 A

0.22

0.25

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (*)

Forward Transconductance

VDS > ID(on) x RDS(on)max,

ID =3 A

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 25V, f = 1 MHz, VGS = 0

280

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