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STD15N06 Fiches technique(PDF) 3 Page - STMicroelectronics

No de pièce STD15N06
Description  N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
PDF  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD15N06 Fiches technique(HTML) 3 Page - STMicroelectronics

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
td(on)
tr
Turn-on Time
Rise Time
VDD =30 V
ID =7.5 A
RG =47
Ω
VGS =10 V
(see test circuit figure)
40
170
60
250
ns
ns
(di/dt) on
Turn-on Current Slope
VDD =40 V
ID =15 A
RG =47
Ω
VGS =10 V
(see test circuit figure)
170
A/
µs
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =48 V
ID =15 A
VGS =10 V
23
10
8
34
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Of f-voltage Rise Time
Fall Time
Cross-over Time
VDD =48 V
ID =15 A
RGS =47
Ω VGS =10 V
(see test circuit figure)
50
70
130
70
100
170
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
ISD
I SDM(
•)
Source-drain Current
Source-drain Current
(pulsed)
15
60
A
A
VSD (
∗)
Forward On Volt age
ISD =15 A
VGS =0
1.5
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 15 A
di/dt = 100 A/
µs
VDD =25 V
Tj = 150
oC
60
0.16
5
ns
µC
A
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
STD15N06
3/10



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