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2STC4467 Fiches technique(PDF) 3 Page - STMicroelectronics

No de pièce 2STC4467
Description  High power NPN epitaxial planar bipolar transistor
PDF  7 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

2STC4467 Fiches technique(HTML) 3 Page - STMicroelectronics

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2STC4467
Electrical characteristics
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2
Electrical characteristics
(Tcase = 25 °C; unless otherwise specified)
Table 4.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off current
(IE = 0)
VCB = 120 V
10
µA
IEBO
Emitter cut-off current
(IC = 0)
VEB = 6 V
10
µA
V(BR)CEO
(1)
1.
Pulsed duration = 300 µs, duty cycle
≤ 1.5%
Collector-emitter breakdown
voltage (IB = 0)
IC = 50 mA
120
V
V(BR)CBO
Collector-base breakdown
voltage (IE = 0)
IC = 100 µA
120
V
V(BR)EBO
(1) Emitter-base breakdown voltage
(IC = 0)
IE = 1 mA
6V
VCE(sat)
(1) Collector-emitter saturation
voltage
IC = 3 A
IB = 300 mA
1.5
V
hFE
DC current gain
IC = 3 A
VCE = 4 V
70
140
fT
Transition frequency
IC = 0.5 A
VCE = 12 V
20
MHz



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