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STB5610 Fiches technique(PDF) 5 Page - STMicroelectronics

No de pièce STB5610
Description  GPS RF FRONT-END IC
PDF  11 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB5610 Fiches technique(HTML) 5 Page - STMicroelectronics

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STB5610
ELECTRICAL CHARACTERISTICS (Vcc = 3+/-10%, Tcase= 25 oC)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ABSOLUTE MAXIMUM RATING
Symbol
Parameter
Value
Unit
Vcc
Supply voltage
5.9
V
Tj
Junction operating temperature
-40 to 125
oC
THERMAL DATA
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case
TBD
oC/W
SUPPLY
Vcc
Supply voltage
2.7
3.3
3.6
V
Icc
Supply current
37
mA
AS1
Vcc Antenna
Supply
2.7
3.3 / 5
5.5
V
LNA
Gp
Power gain
Pin GC at GND
Pin GC at Vcc
19
10
dB
NF
Noise figure
Pin GC at GND
Pin GC at Vcc
3
10
dB
IIP3
Input IP3
Pin GC at GND
Pin GC at Vcc
-20
-5
dBm
VSWRin
Voltage Stat. Wave
Ratio
ZL=50Ω
2.1
RF AMPLIFIER AND MIXER CHAIN
IIP3
Input IP3
-19
dBm
NF
Noise Figure
5.5
dB
ZIN
Input impedance
50
Ω
ZOUT
Differential output
impedance
1.4
ΚΩ
fRF
Input signal RF
1.575
MHz
G
Voltage Convertion
Gain
30
dB
FIRST LIMITING AMPLIFIER
G
Voltage Gain
60
dB
ZOUT
Differential output
impedance
2.4
ΚΩ



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