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SFS9926 Fiches technique(PDF) 3 Page - SemiWell Semiconductor |
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SFS9926 Fiches technique(HTML) 3 Page - SemiWell Semiconductor |
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3 / 6 page ![]() 2 10 -1 10 0 10 1 125 oC 25 oC -55 oC Notes : ※ 1. V DS = 5V 2. 250µ s Pulse Test V GS, Gate-Source Voltage [V] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 0 10 1 150℃ Notes : ※ 1. V GS = 0V 2. 250µ s Pulse Test 25℃ V SD, Source-Drain voltage [V] 10 -1 10 0 10 0 10 1 V GS Top : 4.5 V 4.0 V 3.5 V 3.0 V 2.5 V Bottom : 2.0 V Notes : ※ 1. 250µ s Pulse Test 2. T C = 25℃ V DS, Drain-Source Voltage [V] 03 69 12 15 18 0 1 2 3 4 5 V DS = 10V V DS = 16V Note : I ※ D = 6.5A Q G, Total Gate Charge [nC] 0 5 10 15 20 25 0 250 500 750 1000 1250 1500 C rss C oss C iss Notes : ※ 1. V GS = 0V 2. f=1MHz C iss=Cgs+Cgd(Cds=shorted) C oss=Cds+Cgd C rss=Cgd V DS, Drain-Source Voltage [V] 0 5 10 15 20 25 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 V GS = 4.5V V GS = 2.5V Note : T ※ J = 25 ℃ I D, Drain Current [A] 3/6 Fig 3. On Resistance Variation vs. Drain Current and Gate Voltage Fig 4. On State Current vs. Allowable Case Temperature Fig 5. Capacitance Characteristics Fig 6. Gate Charge Characteristics SFS9926 Fig 1. On-State Characteristics Fig 2. Transfer Characteristics Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. |
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