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EM640FP16AS-45LL Fiches technique(PDF) 9 Page - Emerging Memory & Logic Solutions Inc

No de pièce EM640FP16AS-45LL
Description  64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
PDF  11 Pages
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Fabricant  EMLSI [Emerging Memory & Logic Solutions Inc]
Site Internet  http://www.emlsi.com
Logo EMLSI - Emerging Memory & Logic Solutions Inc

EM640FP16AS-45LL Fiches technique(HTML) 9 Page - Emerging Memory & Logic Solutions Inc

Back Button EM640FP16AS-45LL Datasheet HTML 3Page - Emerging Memory & Logic Solutions Inc EM640FP16AS-45LL Datasheet HTML 4Page - Emerging Memory & Logic Solutions Inc EM640FP16AS-45LL Datasheet HTML 5Page - Emerging Memory & Logic Solutions Inc EM640FP16AS-45LL Datasheet HTML 6Page - Emerging Memory & Logic Solutions Inc EM640FP16AS-45LL Datasheet HTML 7Page - Emerging Memory & Logic Solutions Inc EM640FP16AS-45LL Datasheet HTML 8Page - Emerging Memory & Logic Solutions Inc EM640FP16AS-45LL Datasheet HTML 9Page - Emerging Memory & Logic Solutions Inc EM640FP16AS-45LL Datasheet HTML 10Page - Emerging Memory & Logic Solutions Inc EM640FP16AS-45LL Datasheet HTML 11Page - Emerging Memory & Logic Solutions Inc  
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EM611FV16 Series
Low Power, 64Kx16 SRAM
9
merging Memory & Logic Solutions Inc.
merging Memory & Logic Solutions Inc.
DATA RETENTION CHARACTERISTICS
NOTES
1.See the ISB1 measurement condition of datasheet page 4.
2.Typical values are measured at TA=25
oC and not 100% tested.
Parameter
Symbol
Test Condition
Min
Typ2)
Max
Unit
VCC for Data Retention
VDR
ISB1 Test Condition
(Chip Disabled)
1)
1.5
-
3.6
V
Data Retention Current
IDR
VCC=1.5V, ISB1 Test Condition
(Chip Disabled)
1)
-
0.25
-
µA
Chip Deselect to Data Retention Time
tSDR
See data retention wave form
0
-
-
ns
Operation Recovery Time
tRDR
tRC
-
-
tSDR
tRDR
Data Retention Mode
CS > Vcc-0.2V or LB= UB
≥ V
CC-0.2V
V
cc
2.7V
2.2V
V
DR
CS ,LB /UB
GND
DATA RETENTION WAVE FORM



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