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EM640FP16AS-45LL Fiches technique(PDF) 9 Page - Emerging Memory & Logic Solutions Inc |
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EM640FP16AS-45LL Fiches technique(HTML) 9 Page - Emerging Memory & Logic Solutions Inc |
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9 / 11 page ![]() EM611FV16 Series Low Power, 64Kx16 SRAM 9 merging Memory & Logic Solutions Inc. merging Memory & Logic Solutions Inc. DATA RETENTION CHARACTERISTICS NOTES 1.See the ISB1 measurement condition of datasheet page 4. 2.Typical values are measured at TA=25 oC and not 100% tested. Parameter Symbol Test Condition Min Typ2) Max Unit VCC for Data Retention VDR ISB1 Test Condition (Chip Disabled) 1) 1.5 - 3.6 V Data Retention Current IDR VCC=1.5V, ISB1 Test Condition (Chip Disabled) 1) - 0.25 - µA Chip Deselect to Data Retention Time tSDR See data retention wave form 0 - - ns Operation Recovery Time tRDR tRC - - tSDR tRDR Data Retention Mode CS > Vcc-0.2V or LB= UB ≥ V CC-0.2V V cc 2.7V 2.2V V DR CS ,LB /UB GND DATA RETENTION WAVE FORM |
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