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T0510MH Fiches technique(PDF) 3 Page - STMicroelectronics

No de pièce T0510MH
Description  STANDARD TRIACS
PDF  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

T0510MH Fiches technique(HTML) 3 Page - STMicroelectronics

  T0510MH Datasheet HTML 1Page - STMicroelectronics T0510MH Datasheet HTML 2Page - STMicroelectronics T0510MH Datasheet HTML 3Page - STMicroelectronics T0510MH Datasheet HTML 4Page - STMicroelectronics T0510MH Datasheet HTML 5Page - STMicroelectronics  
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012
34
5
0
1
2
3
4
5
6
7
180
O
= 180
o
= 120
o
=90
o
=60
o
=30
o
T(RMS)
I
(A)
P(W)
Fig.1 : Maximum RMS power dissipation versus
RMS on-state current.
0
10 20 30 40 50 60 70 80 90 100 110 120 130
0
1
2
3
4
5
6
= 180
o
Tcase( C)
o
I
(A)
T(RMS)
Fig.3 : RMS on-state current versus case tempera-
ture.
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Igt
Tj( C)
o
Ih
-40
-20
0
20
40
60
80
100
120 140
Igt[Tj]
Igt[Tj=25 C]
o
Ih[Tj]
Ih[Tj=25 C]
o
Fig.5 : Relative variation of gate trigger current and
holding current versus junction temperature.
0
20
40
60
80
100
120
140
0
1
2
3
4
5
6
7
-100
-105
-110
-115
-120
-125
Rth = 0 C/W
5 C/W
10 C/W
15 C/W
o
o
o
o
Tamb ( C)
o
P(W)
Tcase ( C)
o
Fig.2 : Correlation between maximum RMS power
dissipation and maximum allowable temperature
(Tamb and Tcase) for different thermal resistances
heatsink + contact.
1E-3
1E-2
1E-1
1E +0
1 E +1
1E +2 5 E+2
0.01
0.1
1
Zth/Rth
Zt h( j-c )
Zt h( j-a )
tp (s )
Fig.4 : Relative variation of thermal impedance
versus pulse duration.
1
10
100
100 0
0
5
10
15
20
25
30
35
40
Tj initial = 25 C
o
Number of cycles
I
(A)
TSM
Fig.6 : Non repetitive surge peak on-state current
versus number of cycles.
®
T0510xH / T0512xH
3/5



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