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STPS1045D Fiches technique(PDF) 4 Page - STMicroelectronics |
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STPS1045D Fiches technique(HTML) 4 Page - STMicroelectronics |
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4 / 8 page ![]() Characteristics STPS1045 4/8 Figure 7. Relative variation of thermal transient impedance junction to case versus pulse duration (TO-220AC) Figure 8. Relative variation of thermal transient impedance junction to case versus pulse duration (TO-220FPAC) 1E-4 1E-3 1E-2 1E-1 1E+0 0.0 0.2 0.4 0.6 0.8 1.0 Z/R th(j-c) th(j-c) T δ=tp/T tp t (s) p δ = 0.5 δ = 0.2 δ = 0.1 Single pulse 1E-3 1E-2 1E-1 1E+0 1E+1 0.0 0.2 0.4 0.6 0.8 1.0 Z/R th(j-c) th(j-c) T δ=tp/T tp t (s) p δ = 0.5 δ = 0.2 δ = 0.1 Single pulse Figure 9. Reverse leakage current versus reverse voltage applied (typical values) Figure 10. Reverse leakage current versus reverse voltage applied (typical values) Figure 11. Forward voltage drop versus forward current (maximum values) 0 5 10 15 20 25 30 35 40 45 1E-1 1E+0 1E+1 1E+2 1E+3 1E+4 1E+5 I (µA) R V (V) R T =125°C j T =150°C j T =100°C j T =25°C j T =50°C j T =75°C j 12 5 10 20 50 100 200 500 1000 C(pF) V (V) R F=1MHz V =30mV T =25°C OSC RMS j 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1.0 10.0 100.0 I (A) FM T =125°C (typical values) j T =25°C j T =125°C j V (V) FM |
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