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STB40N60M2 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited

No de pièce STB40N60M2
Description  isc N-Channel MOSFET Transistor
PDF  5 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

STB40N60M2 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited

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isc N-Channel MOSFET Transistor
STB40N60M2
www.iscsemi.com
2
ELECTRICAL CHARACTERISTICS（TC=25℃ unless otherwise specified）
SYMBO
L
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage VGS= 0V; ID= 1mA
600
--
--
V
IDSS
Zero Gate Voltage Drain Current
VDS= 600V; VGS= 0V
--
--
1.0
uA
IGSS
Gate-Body Leakage Current
VGS= ±25V;VDS= 0V
--
--
±
10
uA
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID= 250uA
2.0
--
4.5
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID= 17A
--
--
88
mΩ
VSD
Forward On-Voltage
IS= 34A; VGS= 0V
--
--
1.6
V
Ciss
Input Capacitance
VDS=400V,VGS=0V,f=1MHz
--
3200
--
pF
Coss
Output Capacitance
--
80
--
Crss
Reverse Transfer Capacitance
--
--
--
td(on)
Turn-On Delay Time
VDS=400V,ID=25A,
RG=10Ω,VGS=10V
--
18
--
ns
tr
Turn-On Rise Time
--
9
--
td(off)
Turn-Off Delay Time
--
70
--
tf
Turn-Off Fall Time
--
8
--
Qg
Total Gate Charge
VDS=400V,ID=25A,VGS=10V
--
75
--
nC
Qgs
Gate-Source Charge
--
17.1
--
Qgd
Gate-Drain Charge
--
34.5
--
RG
Gate Resistance
f=1MHz
--
1.4
--
Ω
trr
Reverse Recovery Time
VDD=400V,IS=25A,
diF/dt=100A/us
--
415
--
ns
Qrr
Reverse Recovery Charge
--
7.5
--
uC



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