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SD1680 Fiches technique(PDF) 1 Page - STMicroelectronics |
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SD1680 Fiches technique(HTML) 1 Page - STMicroelectronics |
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1 / 7 page ![]() 800/900 MHz APPLICATIONS RF & MICROWAVE TRANSISTORS 2 x . 437 x .450 2LFL (M175) epoxy sealed . 915 - 960 MHz . 24 VOLTS . CLASS AB PUSH PULL . INTERNAL INPUT MATCHING . DESIGNED FOR HIGH POWER LINEAR OPERATION . HIGH SATURATED POWER CAPABILITY . GOLD METALLIZATION FOR HIGH RELIABILITY . DIFFUSED EMITTER BALLAST RESISTORS . COMMON EMITTER CONFIGURATION . POUT = 100 W MIN. WITH 7.0 dB GAIN DESCRIPTION The SD1680 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in cellular base station applications. PIN CONNECTION BRANDING SD1680 ORDER CODE SD1680 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Uni t VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 3.0 V IC Device Current 25 A PDISS Power Dissipation 310 W TJ Junction Temperature +200 °C TSTG Storage Temperature − 55 to +150 °C RTH(j-c) Junction-Case Thermal Resistance 0.55 °C/W SD1680 1. Collector 3. Emitter 2. Base THERMAL DATA November 1992 1/7 |
Numéro de pièce similaire - SD1680 |
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Description similaire - SD1680 |
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