SD1542 datasheet(1/5 Pages) STMICROELECTRONICS

No de pièce	SD1542

Description	RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

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Fabricant	STMICROELECTRONICS [STMicroelectronics]

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AVIONICS APPLICATIONS

RF & MICROWAVE TRANSISTORS

.400 x .500 2LFL (M112)

hermetically sealed

.

DESIGNED FOR HIGH POWER PULSED

IFF

.

600 WATTS (min.) IFF 1030/1090 MHz

.

REFRACTORY GOLD METALLIZATION

.

6.0 dB MIN. GAIN

.

BALLASTING AND LOW THERMAL

REISTANCE FOR RELIABILITY AND

RUGGEDNESS

.

30:1 LOAD VSWR CAPABILITY AT

SPECIFIED OPERATING CONDITIONS

.

INPUT MATCHED, COMMON BASE

CONFIGURATION

DESCRIPTION

The SD1542-04 is a hermetically sealed, gold me-

tallized, silicon NPN power transistor. The SD1542-

04 is designed for applications requiring high peak

power and low duty cycles such as IFF. The

SD1542-04 is packaged in a hermetic metal/ce-

ramic package with internal input matching, re-

sulting in improved broadband performance and

low thermal reistance.

PIN CONNECTION

BRANDING

SD1542-4

ORDER CODE

SD1542-04

ABSOLUTE MAXIMUM RATINGS (Tcase

= 25°C)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

65

V

VCES

Collector-Emitter Voltage

65

V

VEBO

Emitter-Base Voltage

3.5

V

IC

Device Current

40

A

PDISS

Power Dissipation

1350

W

TJ

Junction Temperature

+200

°C

TSTG

Storage Temperature

− 65 to +150

°C

RTH(j-c)

Junction-Case Thermal Resistance

0.06

°C/W

SD1542-04

1. Collector

3. Emitter

2. Base

4. Base

THERMAL DATA

November 1992

1/5

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