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BUS13A Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce BUS13A
Description  isc Silicon NPN Transistor
PDF  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUS13A Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc Silicon NPN Transistor
BUS13A
www.iscsemi.com
1
DESCRIPTION
· Collector-Emitter Breakdown Voltage
-V(BR)CEO= 450V(Min)
· Collector-Emitter Saturation Voltage
-VCE(sat):1.5V(Max) @IC= 8A
APPLICATIONS
· Converters
· Inverters
· Switching Regulators
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1000
V
VCEO
Collector-Emitter Voltage
450
V
IC
Collector Current-Continuous
15
A
ICM
Collector Current-Peak,tp＜2ms
30
A
IB
Base Current-Continuous
6
A
IBM
Base Current--Peak,tp＜2ms
9
A
PC
Total Power Dissipation
175
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature Range
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.0
℃
/W


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