SA12B5 datasheet(3/5 Pages) STMICROELECTRONICS

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0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

1E-4

1E-3

1E-2

1E-1

1E+0

Ipp(A)

Tj=25

°C

Tj=85

°C

tp=2.5

µs

Tj=-40

°C

Vcl(V)

Fig1-1: Clamping forward voltage versus peak

pulse current (typical values, low level).

100

125

1E-2

1E-1

1E+0

1E+1

1E+2

Tj(

°C)

IR(

µA)

VR=7.5V

Fig 2: Leakage current versus junction tempera-

ture (typical values).

100

125

0.0

0.2

0.4

0.6

0.8

1.0

1.2

IFSM[Tj] / IFSM[Tj=25

°C]

Tj(

°C)

Fig 4: Non repetitive surge peak forward current

versus initial junction temperature.

1234567

0.1

1.0

5.0

Ipp(A)

Tj=25

°C

tp=2.5

µs

Vcl(V)

Fig1-2: Clamping forward voltage versus peak

pulse current (typical values, high level).

100

1000

tp(

µs)

IFSM(A)

Tj initial =25

°C

Fig 3: Non repetitive surge peak forward current

versus pulse duration (rectangular waveform).

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

Vi/o-gnd(V)

Ci/o(pF)

Vcc=5V

F=1MHz

Vosc=30mV

Fig 5: Capacitance between input or output and

ground versus applied voltage (typical values).

SA12B5 / SA16B3 / SA16B6

3/5

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