STB60NF06 datasheet(3/14 Pages) STMICROELECTRONICS

No de pièce	STB60NF06

Description	N-channel 60V - 0.014Ω - 60A - D2PAK/I2PAK STripFET™ II Power MOSFET

PDF	14 Pages

Scroll/Zoom	100%

Fabricant	STMICROELECTRONICS [STMicroelectronics]

Site Internet	http://www.st.com

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3 / 14 page

STB60NF06 - STB60NF06-1

Electrical ratings

3/14

Electrical ratings

Table 1.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

VDGR

Drain-gate voltage (RGS = 20 kΩ)60

VGS

Gate- source voltage

± 20

Drain current (continuous) at TC = 25°C

Drain current (continuous) at TC = 100°C

IDM

(1)

Pulse width limited by safe operating area.

Drain current (pulsed)

240

Ptot

Total dissipation at TC = 25°C

110

Derating Factor

0.73

W/°C

dv/dt (2)

ISD ≤60A, di/dt ≤400A/µs, VDD ≤24V, Tj ≤TJMAX

Peak diode recovery voltage slope

V/ns

Tstg

Storage temperature

-65 to 175

°C

Max. operating junction temperature

Table 2.

Thermal data

Rthj-case

Thermal resistance junction-case max

1.36

°C/W

Rthj-amb

Thermal resistance junction-ambient max

62.5

°C/W

Maximum lead temperature for soldering purpose

300

°C

Table 3.

Avalanche characteristics

Symbol

Parameter

Max Value

Unit

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 °C, ID = IAR, VDD = 30 V)

360

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