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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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IXTY3N50P Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IXTY3N50P Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc N-Channel MOSFET Transistor IXTY3N50P www.iscsemi.com V2.0 1 FEATURES · Drain Current -ID= 3A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 2Ω(Max)@VGS= 10V APPLICATIONS · DC-DC Converters · AC and DC Motor Drives · High Voltage Pulse Power Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ± 30 V ID Drain Current-Continuous 3 A IDM Drain Current-Pulsed Pulse Width Limited by TJM 8 A PD Total Dissipation 70 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.79 ℃ /W |
Numéro de pièce similaire - IXTY3N50P |
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