3CD010 datasheet(1/2 Pages) ISC

No de pièce	3CD010

Description	isc Silicon PNP Transistor

PDF	2 Pages

Scroll/Zoom	100%

Fabricant	ISC [Inchange Semiconductor Company Limited]

Site Internet	http://www.iscsemi.cn

Logo

1 / 2 page

isc Silicon PNP Transistor

3CD010

www.iscsemi.com

1

FEATURES

· BVCEO > -30V

· ICM = -1.5A Peak Pulse Current

· Low Collector-Emitter Saturation Voltage

APPLICATIONS

· Low-frequency power amplification

· DC motor drive

· Low-speed DC power switch

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCEO

Collector-Emitter peak Voltage

-30

V

VEBO

Emitter-Base Voltage

-5

V

ICM

Peak Pulse Current

-1.5

A

PD

Power Dissipation

10

W

TJ

Junction Temperature

-55~175

℃

Tstg

Storage Temperature

-55~175

℃

Numéro de pièce similaire - 3CD010

Fabricant	No de pièce	Fiches technique	Description
Inchange Semiconductor ...	3CD010G	252Kb / 2P	isc Silicon PNP Power Transistor

More results

Description similaire - 3CD010

Fabricant	No de pièce	Fiches technique	Description
Inchange Semiconductor ...	2SA743	104Kb / 2P	isc Silicon PNP Power Transistor
	BDX20	77Kb / 2P	isc Silicon PNP Power Transistor
	BD908	106Kb / 2P	isc Silicon PNP Power Transistor
	2SA1758	102Kb / 2P	isc Silicon PNP Power Transistor
	2SA744	72Kb / 2P	isc Silicon PNP Power Transistor
	2SA1301	78Kb / 2P	isc Silicon PNP Power Transistor
	2SA1015	124Kb / 2P	isc Silicon PNP Transistor
	2SA1013	234Kb / 2P	isc Silicon PNP Transistor
	2SA1283	234Kb / 2P	isc Silicon PNP Transistor
	MMBT2907A	298Kb / 2P	isc Silicon PNP Transistor

More results

3CD010 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

3CD010 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

Numéro de pièce similaire - 3CD010

Description similaire - 3CD010

Html Pages

1 2

Fiches technique Télécharger

Lien URL