2DB1184Q datasheet(1/2 Pages) ISC

No de pièce	2DB1184Q

Description	isc Silicon PNP Transistor

PDF	2 Pages

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Fabricant	ISC [Inchange Semiconductor Company Limited]

Site Internet	http://www.iscsemi.cn

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isc Silicon PNP Transistor

2DB1184Q

www.iscsemi.com

1

FEATURES

· BVCEO > -50V

· IC = -3A High Continuous Collector Current

· Low Collector-Emitter Saturation Voltage

APPLICATIONS

· Switching regulators

· Motor drive circuits

· Medium‑ power switching circuits

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-60

V

VCEO

Collector-Emitter peak Voltage

-50

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-3

A

ICM

Peak Pulse Current

-4.5

A

TJ

Junction Temperature

-55~150

℃

Tstg

Storage Temperature

-55~150

℃

Numéro de pièce similaire - 2DB1184Q

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