MSC80197 datasheet(1/6 Pages) STMICROELECTRONICS

No de pièce	MSC80197

Description	RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS

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Fabricant	STMICROELECTRONICS [STMicroelectronics]

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October 1992

GENERAL PURPOSE LINEAR APPLICATIONS

RF & MICROWAVE TRANSISTORS

.250 2LFL (S011)

hermetically sealed

.

EMITTER BALLASTED

.

CLASS A LINEAR OPERATION

.

COMMON EMITTER

.

VSWR CAPABILITY 15:1 @ RATED

CONDITIONS

.

ft 3.2 GHz TYPICAL

.

NOISE FIGURE 12.5 dB @ 2 GHz

.

POUT

= 31.7 dBm MIN. @ 2.0 GHz

DESCRIPTION

The MSC80197 is a hermetically sealed NPN

power transistor featuring a unique matrix structure.

This device is specifically designed for Class A

linear applications to provide high gain and high

output power at the 1.0 dB compression point.

PIN CONNECTION

BRANDING

80197

ORDER CODE

MSC80197

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

Parameter

Value

Unit

PDISS

Power Dissipation

(see Safe Area)

—

W

IC

Device Bias Current

700

mA

VCE

Collector-Emitter Bias Voltage*

20

V

TJ

Junction Temperature

200

°C

TSTG

Storage Temperature

− 65 to +200

°C

RTH(j-c)

Junction-Case Thermal Resistance*

8.5

°C/W

*Applies only to rated RF amplifier operation

MSC80197

1. Collector

3. Base

2. Emitter

4. Emitter

THERMAL DATA

1/6

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