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STB75NF20 Fiches technique(PDF) 5 Page - STMicroelectronics

No de pièce STB75NF20
Description  N-channel 200V - 0.028 - 75A - D2PAK - TO-220 - TO-247 Low gate charge STripFET Power MOSFET
PDF  16 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB75NF20 Fiches technique(HTML) 5 Page - STMicroelectronics

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STB75NF20 - STP75NF20 - STW75NF20
Electrical characteristics
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Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ. Max. Unit
ISD
ISDM
(1)
1.
Pulse with limited by maximum temperature
Source-drain current
Source-drain current (pulsed)
75
300
A
A
VSD
(2)
2.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward on voltage
ISD = 75A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 75A,VDD = 100V
di/dt = 100 A/µs
Tj = 25°C (see Figure 20)
222
2.18
19
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 75A, VDD = 100V
di/dt = 100 A/µs
Tj = 150°C (see Figure 20)
267
3
22
ns
µC
A



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