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MMBT2222A Fiches technique(PDF) 2 Page - STMicroelectronics

No de pièce MMBT2222A
Description  SMALL SIGNAL NPN TRANSISTOR
PDF  5 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

MMBT2222A Fiches technique(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
Rthj-amb
• Thermal Resistance Junction-Ambient
Max
357.1
oC/W
• Device mounted on a PCB area of 1 cm2 .
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICEX
Collector Cut-off
Current (VBE = -3 V)
VCE = 60 V
10
nA
IBEX
Base Cut-off Current
(VBE = -3 V)
VCE = 60 V
20
nA
ICBO
Collector Cut-off
Current (IE = 0)
VCB = 75 V
VCB = 75 V
Tj = 150
oC
10
10
nA
µA
IEBO
Emitter Cut-off Current
(IC = 0)
VEB = 3 V
15
nA
V(BR)CEO
∗ Collector-Emitter
Breakdown Voltage
(IB = 0)
IC = 10 mA
40
V
V(BR)CBO
Collector-Base
Breakdown Voltage
(IE = 0)
IC = 10
µA
75
V
V(BR)EBO
Emitter-Base
Breakdown Voltage
(IC = 0)
IE = 10
µA
6V
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = 150 mA
IB = 15 mA
IC = 500 mA
IB = 50 mA
0.3
1
V
V
VBE(sat)
∗ Collector-Base
Saturation Voltage
IC = 150 mA
IB = 15 mA
IC = 500 mA
IB = 50 mA
0.6
1.2
2
V
V
hFE
∗
DC Current Gain
IC = 0.1 mA
VCE = 10 V
IC = 1 mA
VCE = 10 V
IC = 10 mA
VCE = 10 V
IC = 150 mA
VCE = 10 V
IC = 150 mA
VCE = 1 V
IC = 500 mA
VCE = 10 V
35
50
75
100
50
40
300
fT
Transition Frequency
IC = 20 mA VCE = 20V f = 100MHz
270
MHz
CCBO
Collector-Base
Capacitance
IE = 0
VCB = 10 V
f = 1 MHz
4
8
pF
CEBO
Emitter-Base
Capacitance
IC = 0
VEB = 0.5 V
f = 1MHz
20
25
pF
NF
Noise Figure
IC = 0.1 mA
VCE = 10 V
f = 1 KHz
∆f = 200 Hz RG = 1 KΩ
4dB
hie
∗
Input Impedance
VCE = 10 V
IC = 1 mA
f = 1 KHz
VCE = 10 V
IC = 10 mA
f = 1 KHz
2
0.25
8
1.25
K
Ω
K
Ω
hre
∗
Reverse Voltage Ratio
VCE = 10 V
IC = 1 mA
f = 1 KHz
VCE = 10 V
IC = 10 mA
f = 1 KHz
8
4
10
-4
10
-4
hfe
∗
Small Signal Current
Gain
VCE = 10 V
IC = 1 mA
f = 1 KHz
VCE = 10 V
IC = 10 mA
f = 1 KHz
50
75
300
375
hoe
∗
Output Admittance
VCE = 10 V
IC = 1 mA
f = 1 KHz
VCE = 10 V
IC = 10 mA
f = 1 KHz
5
25
35
200
µS
µS
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
MMBT2222A
2/5



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