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ISC4N1350 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited

No de pièce ISC4N1350
Description  isc N-Channel MOSFET Transistor
PDF  5 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISC4N1350 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited

  ISC4N1350 Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISC4N1350 Datasheet HTML 2Page - Inchange Semiconductor Company Limited ISC4N1350 Datasheet HTML 3Page - Inchange Semiconductor Company Limited ISC4N1350 Datasheet HTML 4Page - Inchange Semiconductor Company Limited ISC4N1350 Datasheet HTML 5Page - Inchange Semiconductor Company Limited  
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isc N-Channel MOSFET Transistor
ISC4N1350
www.iscsemi.com
2023-9-7
2
ELECTRICAL CHARACTERISTICS（TC=25℃ unless otherwise specified）
SYMBO
L
PARAMETER
CONDITIONS
MIN
Typ
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0V; ID= 1mA
1500
--
--
V
VGS(th)
Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
3.0
--
6.0
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID= 1.3A
--
--
9.0
Ω
IGSS
Gate-Body Leakage Current
VGS= ±30V;VDS= 0V
--
--
±
100
nA
IDSS
Zero Gate Voltage Drain Current
VDS= 1500V; VGS= 0V
--
--
10
uA
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
VGS=0V,
VDS=25V,
f=1.0MHZ
--
1600
--
pF
Crss
Reverse Transfer Capacitance
--
33
--
Coss
Output Capacitance
--
100
--
Rg
Gate input resistance
f=1 MHz Gate DC Bias=0
Test signal level=20mV
open drain
--
4.5
--
Ω
Qg
Total Gate Charge
VDD=750V,
ID=3A, VGS=0 to 10V
--
36
--
nC
Qgs
Gate-to-Source Charge
--
9.5
--
Qgd
Gate-to-Drain (Miller) Charge
--
12
--
td(on)
Turn-on Delay Time
VDD=750V,
ID=3A,
VGS=10V
Rg=4.7Ω
--
25
--
nS
tr
Rise Time
--
48
--



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