M68AR024D datasheet(14/19 Pages) STMICROELECTRONICS

No de pièce	M68AR024D

Description	16 Mbit 1M x16 1.8V Asynchronous SRAM

PDF	19 Pages

Scroll/Zoom	100%

Fabricant	STMICROELECTRONICS [STMicroelectronics]

Site Internet	http://www.st.com

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14 / 19 page

M68AR024D

14/19

Figure 13. E1 Controlled, Low VCC Data Retention AC Waveforms

Figure 14. E2 Controlled, Low VCC Data Retention AC Waveforms

Table 9. Low VCC Data Retention Characteristics

Note: 1. All other Inputs at VIH ≥ VCCQ –0.2V or VIL ≤ 0.2V.

2. Tested initially and after any design or process changes that may affect these parameters.

tAVAV is Read cycle time.

3. No input may exceed VCC +0.2V.

Symbol

Parameter

Test Condition

Min

Typ

Max

Unit

ICCDR

(1)

Supply Current (Data Retention)

VCC = 1.0V, E1 ≥ VCCQ –0.2V OR

≤ 0.2V OR

UB, LB

≥ VCCQ –0.2V,

f= 0

0.5

µA

tCDR

(2)

Chip deselected to Data

Retention Time

0ns

(2)

Operation Recovery Time

tAVAV

VDR

(1)

Supply Voltage (Data Retention)

≥ VCCQ –0.2V OR

≤ 0.2V OR

UB, LB

≥ VCCQ –0.2V,

f= 0

1.0

AI05855

DATA RETENTION MODE

1.95V

tCDR

VCC

1.65V

VDR > 1.0V

≥ VDR – 0.2V

AI05875

DATA RETENTION MODE

1.95V

VCC

1.65V

VDR > 1.0V

≤ 0.2V

tCDR

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