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ISCF8023 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce ISCF8023
Description  SiC N-Channel MOSFET
PDF  5 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCF8023 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

  ISCF8023 Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISCF8023 Datasheet HTML 2Page - Inchange Semiconductor Company Limited ISCF8023 Datasheet HTML 3Page - Inchange Semiconductor Company Limited ISCF8023 Datasheet HTML 4Page - Inchange Semiconductor Company Limited ISCF8023 Datasheet HTML 5Page - Inchange Semiconductor Company Limited  
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ISCF8023
eq G2R50MT33K
SiC N-Channel MOSFET
www.iscsemi.com
1
FEATURES
·
Increased System Switching Frequency
·
Reduced Cooling Requirements
·
Higher System Efficiency
·
Increased Power Density
APPLICATIONS
·
Pulsed Power applications
·
Ultra-Fast EV Chargers
·
Solar Inverters
·
Motor drives
Absolute Maximum Ratings(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
3300
V
VGS(MAX)
Gate-Source Opetation Voltage
-10/+22
V
VGS(OP)
Gate-Source Opetation Voltage
-5/+18
V
ID
Drain Current-Continuous@Tc=25℃
63
A
Drain Current-Continuous@Tc=100℃
44
A
IDM
Drain Current-Single Pluse
235
A
PD
Total Dissipation @TC=25℃
536
W
TJ
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.23
℃
/W


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