| Moteur de recherche de fiches techniques de composants électroniques |
|
IRFP064B Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
IRFP064B Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
|
1 / 7 page ![]() isc N-Channel MOSFET Transistor IRFP064B isc website:www.iscsemi.com isc & iscsemi is registered trademark 2023-11-09 1 FEATURES · Drain Current –ID= 200A@ TC=25℃ · Drain Source Voltage- : VDSS= 60V(Min) · Static Drain-Source On-Resistance : RDS(on) = 9mΩ(Max)@VGS= 10V · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION · motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(TA=25℃) THERMAL CHARACTERISTICS Note:EAS* VDD=55V,L=0.4mH,RG=25Ω SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous 200 A IDM Drain Current-Single Pluse 800 A EAS * Single pulse avalanche energy 3800 mJ PD Total Dissipation @TC=25℃ 714 W Tstg Storage Temperature -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.21 ℃ /W |
Numéro de pièce similaire - IRFP064B |
|
Description similaire - IRFP064B |
|
|
|
Lien URL |
| ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Lien vers la fiche technique | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |