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MPR084 Fiches technique(PDF) 27 Page - Freescale Semiconductor, Inc |
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MPR084 Fiches technique(HTML) 27 Page - Freescale Semiconductor, Inc |
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27 / 39 page ![]() MPR084 Sensors Freescale Semiconductor 27 Preliminary Appendix A Electrical Characteristics A.1 Introduction This section contains electrical and timing specifications. A.2 Absolute Maximum Ratings Absolute maximum ratings are stress ratings only, and functional operation at the maxima is not guaranteed. Stress beyond the limits specified in Table A-1 may affect device reliability or cause permanent damage to the device. For functional operating conditions, refer to the remaining tables in this section. This device contains circuitry protecting against damage due to high static voltage or electrical fields; however, it is advised that normal precautions be taken to avoid application of any voltages higher than maximum-rated voltages to this high-impedance circuit. A.3 ESD and Latch-up Protection Characteristics Normal handling precautions should be used to avoid exposure to static discharge. Qualification tests are performed to ensure that these devices can withstand exposure to reasonable levels of static without suffering any permanent damage. During the device qualification ESD stresses were performed for the Human Body Model (HBM), the Machine Model (MM) and the Charge Device Model (CDM). A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device specification. Complete DC parametric and functional testing is performed per the applicable device specification at room temperature followed by hot temperature, unless specified otherwise in the device specification. Table 20. Absolute Maximum Ratings - Voltage (with respect to VSS) Rating Symbol Value Unit Supply Voltage VDD -0.3 to +3.8 V Input Voltage SCL, SDA, AD0, IRQ, ATTN, SOUNDER VIN VSS - 0.3 to VDD + 0.3 V Operating Temperature Range TSG -40 to +85 °C Storage Temperature Range TSG -55 to +150 °C Table 21. ESD and Latch-up Test Conditions Rating Symbol Value Unit Human Body Model (HBM) VESD ±2000 V Machine Model (MM) VESD ±200 V Charge Device Model (CDM) VESD ±500 V Latch-up current at TA = 85°C ILATCH ±100 mA |
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