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M29F200 Fiches technique(PDF) 18 Page - STMicroelectronics

No de pièce M29F200
Description  2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory
PDF  33 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M29F200 Fiches technique(HTML) 18 Page - STMicroelectronics

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 18 / 33 page
background image
Symbol
Alt
Parameter
M29F200T / M29F200B
Unit
-90
-120
Standard
Interface
Standard
Interface
Min
Max
Min
Max
tAVAV
tWC
Address Valid to Next Address Valid
90
120
ns
tELWL
tCS
Chip Enable Low to Write Enable Low
0
0
ns
tWLWH
tWP
Write Enable Low to Write Enable High
45
50
ns
tDVWH
tDS
Input Valid to Write Enable High
45
50
ns
tWHDX
tDH
Write Enable High to Input Transition
0
0
ns
tWHEH
tCH
Write Enable High to Chip Enable High
0
0
ns
tWHWL
tWPH
Write Enable High to Write Enable Low
20
20
ns
tAVWL
tAS
Address Valid to Write Enable Low
0
0
ns
tWLAX
tAH
Write Enable Low to Address Transition
45
50
ns
tGHWL
Output Enable High to Write Enable Low
0
0
ns
tVCHEL
tVCS
VCC High to Chip Enable Low
50
50
µs
tWHGL
tOEH
Write Enable High to Output Enable Low
0
0
ns
tPHPHH
(1,2)
tVIDR
RP Rise Time to VID
500
500
ns
tPLPX
tRP
RP Pulse Width
500
500
ns
tWHRL
(1)
tBUSY Program Erase Valid to RB Delay
35
50
ns
tPHWL
(1)
tRSP
RP High to Write Enable Low
4
4
µs
Notes: 1. Sample only, not 100% tested.
2. This timing is for Temporary Block Unprotection operation.
Table 15B. Write AC Characteristics, Write Enable Controlled
(TA = 0 to 70
°C, –40 to 85°C or –40 to 125°C)
18/33
M29F200T, M29F200B



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