M48Z129YPM datasheet(6/13 Pages) STMICROELECTRONICS

6 / 13 page

M48Z129Y, M48Z129V

6/13

Table 7. Power Down/Up Trip Points DC Characteristics (1)

(TA = 0 to 70 °C)

Note: 1. All voltages referenced to VSS.

2. At 25 °C.

Table 8. Power Down/Up AC Characteristics

(TA = 0 to 70 °C)

Note: 1. VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring until 200µs after VCC pass-

es VPFD (min).

2. VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data.

Symbol

Parameter

Min

Typ

Max

Unit

VPFD

Power-fail Deselect Voltage (M48Z129Y)

4.2

4.35

4.5

Power-fail Deselect Voltage (M48Z129V)

2.7

2.9

3.0

VSO

Battery Back-up Switchover Voltage (M48Z129Y)

3.0

Battery Back-up Switchover Voltage (M48Z129V)

2.45

tDR

(2)

Expected Data Retention Time

YEARS

Symbol

Parameter

Min

Max

Unit

(1)

VPFD (max) to VPFD (min) VCC Fall Time

300

µs

tFB

(2)

VPFD (min) to VSS VCC Fall Time (M48Z129Y)

µs

VPFD (min) to VSS VCC Fall Time (M48Z129V)

150

VPFD (min) to VPFD (max) VCC Rise Time

µs

tRB

VSS to VPFD (min) VCC Rise Time

1µs

tWPT

Write Protect Time (M48Z129Y)

150

µs

Write Protect Time (M48Z129V)

250

tREC

VPFD (max) to RST High

200

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