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FS50R12KT3 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited

No de pièce FS50R12KT3
Description  IGBT Modules
PDF  4 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

FS50R12KT3 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited

  FS50R12KT3 Datasheet HTML 1Page - Inchange Semiconductor Company Limited FS50R12KT3 Datasheet HTML 2Page - Inchange Semiconductor Company Limited FS50R12KT3 Datasheet HTML 3Page - Inchange Semiconductor Company Limited FS50R12KT3 Datasheet HTML 4Page - Inchange Semiconductor Company Limited  
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ISGM2223
eq FS50R12KT3
IGBT Modules
www.iscsemi.com
2
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case, Per IGBT
0.45
℃
/kW
STATIC CHARACTERISTICS（TJ = 25 °C unless otherwise specified）
SYMBOL
PARAMETER
CONDITIONS
MIN
TYPE
MAX
UNIT
VCES
Collector-Emitter Breakdown
Voltage
VGE=0V, IC= 1.0mA
1200
--
--
V
VGE(th)
Gate-Emitter Threshold Voltage
VGE= VCE, IC= 100mA
5.0
--
6.5
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 50A, VGE= 15V
--
--
2.15
V
ICES
Zero Gate Voltage Collector Current
VCE= 1200V, VGE= 0V
--
--
5.0
mA
IGES
Gate-Emitter Leakage Current
VGE=±20V, VCE= 0V
--
--
±
400
nA
MAXIMUM RATED VALUES OF DIODE(TC=25℃ UNLESS OTHERWISE SPECIFIED)
SYMBOL
PARAMETER
VALUE
UNIT
VRRM
Diode Repetitive Peak Reverse Voltage
1200
V
IF
Diode Continuous Forward Current
50
A
IFM
Diode Maximum Forward Current
100
A
I2t
I2t Value, VR=0V, tp=10ms, TVJ=125℃
700
A2S
ELECTRICAL CHARACTERISTICS OF DIODE(TC=25℃ UNLESS OTHERWISE SPECIFIED)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYPE
MAX
UNIT
VF
Diode Forward Voltage
IF= 50A, VGE = 0V
--
--
2.15
V
IRM
Peak Reverse Recovery Current
IF= 50A, VR= 600V,
VGE = -15V
--
60
--
A
Rth j-c
Thermal Resistance,Junction to Case, Per Diode
--
--
0.75
℃
/kW



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