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STGF30H65DFB2 Fiches technique(PDF) 10 Page - STMicroelectronics

No de pièce STGF30H65DFB2
Description  Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a TO‑220FP package
PDF  15 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGF30H65DFB2 Fiches technique(HTML) 10 Page - STMicroelectronics

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Test circuits
Figure 27. Test circuit for inductive load switching
A
A
C
E
G
B
R
G
+
-
G
C
3.3
µF
1000
µF
L=100 µH
V
CC
E
D.U.T
B
AM01504v1
Figure 28. Gate charge test circuit
GADG160420181048IG
RL
VCC
D.U.T.
100 Ω
IG = CONST
Vi ≤ VGMAX
2200
μF
2.7 kΩ
PW
1 kΩ
47 kΩ
Figure 29. Switching waveform
AM01506v1
90%
10%
90%
10%
VG
VCE
IC
td(on)
ton
tr(Ion)
td(off)
toff
tf
tr(Voff)
tcross
90%
10%
Figure 30. Diode reverse recovery waveform
t
GADG180720171418SA
10%
V
RRM
dv/dt
di/dt
I
RRM
I
F
t
rr
t
s
t
f
Q
rr
I
RRM
STGF30H65DFB2
Test circuits
DS13256 - Rev 2
page 10/15



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