AP3400DI datasheet(1/7 Pages) APME

No de pièce	AP3400DI

Description	20V N-Channel Enhancement Mode MOSFET

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Fabricant	APME [A POWER MICROELECTRONICS]

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AP3400DI

20V N-Channel Enhancement Mode MOSFET

AP3400DI RVE1.0

永源微電子科技有限公司

Description

The AP3400DI uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 20V ID =3.2A

RDS(ON) < 56mΩ @ VGS=10V （Type：45mΩ）

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP3400DI

SOT23L

A09T

3000

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Max.

Units

VDSS

Drain-Source Voltage

20

V

VGSS

Gate-Source Voltage

±12

V

ID

Continuous Drain Current TA = 25

℃

3.2

A

ID

Continuous Drain Current TA = 100

℃

2

A

IDM

Pulsed Drain Current

12

A

PD

Power Dissipation TA = 25

℃

0.77

W

RθJA

Thermal Resistance, Junction to Case

162

℃/W

TJ, TSTG

Operating and Storage Temperature Range

-55 to +150

℃

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