AP3400AI datasheet(1/7 Pages) APME

No de pièce	AP3400AI

Description	30V N-Channel Enhancement Mode MOSFET

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Fabricant	APME [A POWER MICROELECTRONICS]

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AP3400AI

30V N-Channel Enhancement Mode MOSFET

AP3400AI REV3.2

永源微電子科技有限公司

Description

The AP3400AI uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 30V ID =6.2A

RDS(ON) <28mΩ @ VGS=10V （Type:20mΩ）

Application

Lithium battery protection

Wireless impact

Mobile phone fast charging

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP3400AI

SOT23L

A09T

3000

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

30

V

VGS

Gate-Source Voltage

±12

V

ID@TA=25℃

Continuous Drain Current

6.2

A

ID@TA=70℃

Continuous Drain Current

4.9

A

IDM

Pulsed Drain Current2

20

A

PD@TA=25℃

Total Power Dissipation3

1

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-ambient 1

125

℃/W

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AP3400AI Fiches technique(PDF) 1 Page - A POWER MICROELECTRONICS

AP3400AI Fiches technique(HTML) 1 Page - A POWER MICROELECTRONICS

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