M29W017D datasheet(29/36 Pages) STMICROELECTRONICS

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M29W017D

Table 19. CFI Query System Interface Information

Table 20. Device Geometry Definition

Address

Data

Description

Value

1Bh

27h

VCC Logic Supply Minimum Program/Erase voltage

bit 7 to 4

BCD value in volts

bit 3 to 0

BCD value in 100 mV

2.7V

1Ch

36h

VCC Logic Supply Maximum Program/Erase voltage

bit 7 to 4

BCD value in volts

bit 3 to 0

BCD value in 100 mV

3.6V

1Dh

00h

VPP [Programming] Supply Minimum Program/Erase voltage

1Eh

00h

VPP [Programming] Supply Maximum Program/Erase voltage

1Fh

04h

Typical timeout per single byte/word program = 2n µs

16µs

20h

00h

Typical timeout for minimum size write buffer program = 2n µs

21h

0Ah

Typical timeout per individual block erase = 2n ms

22h

00h

Typical timeout for full chip erase = 2n ms

23h

04h

Maximum timeout for byte/word program = 2n times typical

256µs

24h

00h

Maximum timeout for write buffer program = 2n times typical

25h

03h

Maximum timeout per individual block erase = 2n times typical

26h

00h

Maximum timeout for chip erase = 2n times typical

Address

Data

Description

Value

27h

15h

Device Size = 2n in number of bytes

2 MByte

28h

29h

00h

Flash Device Interface Code description

Async.

2Ah

2Bh

00h

Maximum number of bytes in multi-byte program or page = 2n

2Ch

01h

Number of Erase Block Regions within the device.

It specifies the number of regions within the device containing contiguous

Erase Blocks of the same size.

2Dh

2Eh

1Fh

00h

Region 1 Information

Number of identical size erase block = 001Fh+1

2Fh

30h

00h

01h

Region 1 Information

Block size in Region 1 = 0100h * 256 byte

64 KByte

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