AP90N03NF datasheet(1/7 Pages) APME

No de pièce	AP90N03NF

Description	30V N-Channel Enhancement Mode MOSFET

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Fabricant	APME [A POWER MICROELECTRONICS]

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AP90N03NF

30V N-Channel Enhancement Mode MOSFET

AP90N03NF RVE1.0

永源微電子科技有限公司

Description

The AP90N03NF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS=30V ID =90A

RDS(ON) < 6.5mΩ @ VGS=10V

（Type：4.8mΩ）

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP90N03NF

PDFN5X6-8L

AP90N03NF XXXX YYYY

5000

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

30

V

VGS

Gate-Source Voltage

±

20

V

ID@TC=25℃

Continuous Drain Current, VGS @ 10V1

90

A

ID@TC=75℃

Continuous Drain Current, VGS @ 10V1

50

A

IDM

Pulsed Drain Current2

240

A

EAS

Single Pulse Avalanche Energy3

56

mJ

IAS

Avalanche Current

15

A

PD@TC=25℃

Total Power Dissipation4

46

W

TSTG

Storage Temperature Range

-55 to 175

℃

TJ

Operating Junction Temperature Range

-55 to 175

℃

RθJA

Thermal Resistance Junction-Ambient 1

25

℃

/W

RθJC

Thermal Resistance Junction-Case1

2.72

℃

/W

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