AP85N03BDF datasheet(1/7 Pages) APME

No de pièce	AP85N03BDF

Description	30V N-Channel Enhancement Mode MOSFET

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Fabricant	APME [A POWER MICROELECTRONICS]

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AP85N03BDF

30V N-Channel Enhancement Mode MOSFET

AP85N03BDF REV1.0

永源微電子科技有限公司

Description

The AP85N03BDF uses advanced APM-SGT V technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 30V ID =85A

RDS(ON) < 2.1mΩ @ VGS=10V （Type：1.78mΩ）

Application

Buck

Boost

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP85N03BDF

PDFN3*3-8L

AP85N03BDF XXX YYYY

5000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Max.

Units

VDSS

Drain-Source Voltage

30

V

VGSS

Gate-Source Voltage

±20

V

ID@TC=25

℃

Continuous Drain Current, VGS @ 10V1

85

A

ID@TC=100

℃

Continuous Drain Current, VGS @ 10V1

56

A

IDM

Pulsed Drain Current

344

A

EAS

Single Pulsed Avalanche Energy

144

mJ

IAS

Avalanche Current

28

A

PD@TC=25

℃

Power Dissipation

28

W

TJ TSTG

Operating Junction Temperature Range

-55 to 150

°C

RθJA

Thermal Resistance Junction-Ambient 1

48

°C/W

RθJC

Thermal Resistance, Junction to Case

1.4

℃/W

Numéro de pièce similaire - AP85N03BDF

Fabricant	No de pièce	Fiches technique	Description
A POWER MICROELECTRONIC...	AP85N03DF	790Kb / 7P	30V N-Channel Enhancement Mode MOSFET REV1.0
A POWER MICROELECTRONIC...	AP85N03NF	873Kb / 7P	30V N-Channel Enhancement Mode MOSFET

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AP85N03BDF Fiches technique(PDF) 1 Page - A POWER MICROELECTRONICS

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