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AP80P06NF Fiches technique(PDF) 3 Page - A POWER MICROELECTRONICS |
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AP80P06NF Fiches technique(HTML) 3 Page - A POWER MICROELECTRONICS |
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3 / 7 page ![]() AP80P06NF -60V P-Channel Enhancement Mode MOSFET AP80P06NF RVE 1.0 永源微電子科技有限公司 Typical Characteristics Figure 1. Type. Output Characteristics (Tj=25 ℃) Figure 2. Type. drain-source on resistance Figure 3. Type. transfer characteristics Figure 4. Type. forward transconductance Figure 5. Drain-source on-state resistance Figure 6 . Body-Diode Characteristics RDS(on) =f(Tj); ID =80A; VGS =10V C=f(VDS ); VGS =0V; f=1MHz |
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