AP80N08NF datasheet(1/9 Pages) APME

No de pièce	AP80N08NF

Description	80V N- Channel Enhancement Mode MOSFET

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Fabricant	APME [A POWER MICROELECTRONICS]

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AP80N08NF

80V N- Channel Enhancement Mode MOSFET

AP80N08NF Rve2.0

臺灣永源微電子科技有限公司

Description

The AP80N08NF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 80V ID =80A

RDS(ON) < 5.5mΩ VGS=10V

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP80N08NF

AP80N08NF XXX YYYY

5000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

80

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25℃

Continuous Drain Current, VGS @ 10V1,6

80

A

ID@TC=100℃

Continuous Drain Current, VGS @ 10V1,6

42.5

A

IDM

Pulsed Drain Current2

170

A

EAS

Single Pulse Avalanche Energy3

57.8

mJ

IAS

Avalanche Current

34

A

PD@TC=25℃

Total Power Dissipation4

56

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

62

℃/W

RθJC

Thermal Resistance Junction-Case1

2.2

℃/W

PDFN5*6-8L

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