AP80N07NF datasheet(1/7 Pages) APME

No de pièce	AP80N07NF

Description	68V N-Channel Enhancement Mode MOSFET

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Fabricant	APME [A POWER MICROELECTRONICS]

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AP80N07NF

68V N-Channel Enhancement Mode MOSFET

AP80N07NF RVE1.0

永源微電子科技有限公司

Description

The AP80N07NF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with Hight EAS. This device is suitable

for use as a Battery protectionor in other Switching

application.

General Features

VDS = 68V ID =80A

RDS(ON) < 9.0mΩ @ VGS=10V (Type：7.2mΩ)

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP80N07NF

PDFN5X6-8L

AP80N07NF XXX YYYY

5000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

68

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25

℃

Continuous Drain Current, VGS @ 10V1

80

A

ID@TC=100

℃

Continuous Drain Current, VGS @ 10V1

52

A

IDM

Pulsed Drain Current2

320

A

EAS

Single Pulse Avalanche Energy3

110

mJ

IAS

Avalanche Current

22

A

PD@TC=25

℃

Total Power Dissipation4

103

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-ambient 1

63

℃/W

RθJC

Thermal Resistance Junction-Case1

1.46

℃/W

Numéro de pièce similaire - AP80N07NF

Fabricant	No de pièce	Fiches technique	Description
A POWER MICROELECTRONIC...	AP80N07BD	709Kb / 7P	68V N-Channel Enhancement Mode MOSFET REV1.0
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AP80N07NF Fiches technique(PDF) 1 Page - A POWER MICROELECTRONICS

AP80N07NF Fiches technique(HTML) 1 Page - A POWER MICROELECTRONICS

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