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M28C16-120WK6TR Fiches technique(PDF) 7 Page - STMicroelectronics |
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M28C16-120WK6TR Fiches technique(HTML) 7 Page - STMicroelectronics |
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7 / 17 page ![]() 7/17 M28C16B, M28C17B Table 6A. Read Mode DC Characteristics for M28CxxB (5V range) (TA = 0 to 70 °C or -40 to 85 °C; VCC = 4.5 to 5.5 V) Note: 1. All inputs and outputs open circuit. Table 6B. Read Mode DC Characteristics for M28CxxB-W (3V range) (TA = 0 to 70 °C or -40 to 85 °C; VCC = 2.7 to 3.6 V) Note: 1. All inputs and outputs open circuit. Symbol Parameter Test Condition Min. Max. Unit ILI Input Leakage Current 0V ≤ VIN ≤ VCC 10 µA ILO Output Leakage Current 0 V ≤ VOUT ≤ VCC 10 µA ICC 1 Supply Current (TTL inputs) E = VIL, G = VIL , f = 5 MHz 30 mA Supply Current (CMOS inputs) E = VIL, G = VIL , f = 5 MHz 25 mA ICC1 1 Supply Current (Stand-by) TTL E = VIH 1mA ICC2 1 Supply Current (Stand-by) CMOS E > VCC - 0.3V 100 µA VIL Input Low Voltage -0.3 0.8 V VIH Input High Voltage 2 VCC + 0.5 V VOL Output Low Voltage IOL = 2.1 mA 0.4 V VOH Output High Voltage IOH = -400 µA 2.4 V Symbol Parameter Test Condition Min. Max. Unit ILI Input Leakage Current 0V ≤ VIN ≤ VCC 10 µA ILO Output Leakage Current 0V ≤ VOUT ≤ VCC 10 µA ICC 1 Supply Current (CMOS inputs) E = VIL, G = VIL , f = 5 MHz, VCC = 3.3V 8 mA E = VIL, G = VIL , f = 5 MHz, VCC = 3.6V 10 mA ICC2 1 Supply Current (Stand-by) CMOS E > VCC - 0.3V 20 µA VIL Input Low Voltage -0.3 0.6 V VIH Input High Voltage 2 VCC + 0.5 V VOL Output Low Voltage IOL = 1.6 mA 0.2 VCC V VOH Output High Voltage IOH = -400 µA 0.8 VCC V cessive Write operations, up to tWLQ5H (defined in Table 10A). The DQ5 line is held low to show when this timer is running (hence showing that the device has received one write operation, and is waiting for the next). The DQ5 line is held high when the counter has overflowed (hence showing that the device is now starting the internal write to the memory array). |
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