AP50G03GD datasheet(1/10 Pages) APME

No de pièce	AP50G03GD

Description	30V NP-Channel Enhancement Mode MOSFET

PDF	10 Pages

Scroll/Zoom	100%

Fabricant	APME [A POWER MICROELECTRONICS]

Site Internet

Logo

1 / 10 page

AP50G03GD

30V N+P-Channel Enhancement Mode MOSFET

AP50G03GD RVE1.0

永源微電子科技有限公司

Description

The AP50G03GD uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 30V ID =52A

RDS(ON) < 10mΩ @ VGS=10V （Type：7.2mΩ）

VDS = -30V ID =-48A

RDS(ON) < 13mΩ @ VGS=-10V （Type：8.8mΩ）

Application

BLDC

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP50G03GD

TO-252-4L

AP50G03GD XXX YYYY

2500

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

N-Ch

P-Ch

Units

VDS

Drain-Source Voltage

30

-30

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25℃

Continuous Drain Current, VGS @ 10V1

52

-48

A

ID@TC=100℃

Continuous Drain Current, VGS @ 10V1

38.5

-37.5

A

IDM

Pulsed Drain Current2

150

-144

A

EAS

Single Pulse Avalanche Energy3

289

378

mJ

IAS

Avalanche Current

28

29.5

A

PD@TC=25℃

Total Power Dissipation4

46

41.3

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

62.5

℃

/W

RθJC

Thermal Resistance Junction-Case1

2.3

℃

/W

Numéro de pièce similaire - AP50G03GD

Fabricant	No de pièce	Fiches technique	Description
A POWER MICROELECTRONIC...	AP50G04GD	1Mb / 10P	40V NP-Channel Enhancement Mode MOSFET REV1.0
A POWER MICROELECTRONIC...	AP50G06GD	2Mb / 10P	60V NP-Channel Enhancement Mode MOSFET

More results

Description similaire - AP50G03GD

Fabricant	No de pièce	Fiches technique	Description
DONGGUAN YOU FENG WEI E...	YFW3G03LI	1Mb / 8P	30V NP-CHANNEL ENHANCEMENT MODE MOSFET Rev:2021Y1
	YFW6G03S	1Mb / 8P	30V NP-CHANNEL ENHANCEMENT MODE MOSFET Rev:2021Y1
	YFW8G03ES	1Mb / 8P	30V NP-CHANNEL ENHANCEMENT MODE MOSFET Rev:2021Y1
	YFW15G03ES	1Mb / 8P	30V NP-CHANNEL ENHANCEMENT MODE MOSFET Rev:2021Y1
	YFW15G03NF	1Mb / 8P	30V NP-CHANNEL ENHANCEMENT MODE MOSFET Rev:2021Y1
	YFW20G03NF	2Mb / 8P	30V NP-CHANNEL ENHANCEMENT MODE MOSFET Rev:2021Y1
	YFW25G03GD	2Mb / 8P	30V NP-CHANNEL ENHANCEMENT MODE MOSFET Rev:2021Y1
	YFW40G03NF	1Mb / 8P	30V NP-CHANNEL ENHANCEMENT MODE MOSFET Rev:2021Y1
	YFW80G03NF	2Mb / 8P	30V NP-CHANNEL ENHANCEMENT MODE MOSFET Rev:2021Y1
Guangdong Youtai Semico...	AO4606	2Mb / 8P	30V NP-Channel Enhancement Mode MOSFET

More results

AP50G03GD Fiches technique(PDF) 1 Page - A POWER MICROELECTRONICS

AP50G03GD Fiches technique(HTML) 1 Page - A POWER MICROELECTRONICS

Numéro de pièce similaire - AP50G03GD

Description similaire - AP50G03GD

Html Pages

1 2 3 4 5 6 7 8 9 10

Fiches technique Télécharger

Lien URL