AP15G03DF datasheet(1/10 Pages) APME

No de pièce	AP15G03DF

Description	30V NP-Channel Enhancement Mode MOSFET

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AP15G03DF

30V N+P-Channel Enhancement Mode MOSFET

AP15G03DF RVE1.0

臺灣永源微電子科技有限公司

Description

The AP15G03DF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a

Battery protection or in other Switching application.

General Features

VDS = 30V ID =19.3A

RDS(ON) < 13mΩ @ VGS=10V (Type：10mΩ)

VDS = -30V ID =-16.5A

RDS(ON) < 25mΩ @ VGS=-10V (Type：21mΩ)

Application

Wireless charging

Boost driver

Brushless motor

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP15G03DF

PDFN3*3-8L

AP15G03DF XXX YYYY

5000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

N-Ch

P-Ch

Units

VDS

Drain-Source Voltage

30

-30

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25℃

Continuous Drain Current, VGS @ 10V1

28

-19.7

A

ID@TC=100℃

Continuous Drain Current, VGS @ 10V1

22.5

-17.5

A

IDM

Pulsed Drain Current2

84

-59.1

A

EAS

Single Pulse Avalanche Energy3

89

78

mJ

IAS

Avalanche Current

34

33.1

A

PD@TC=25℃

Total Power Dissipation4

46

41.3

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

62

℃

/W

RθJC

Thermal Resistance Junction-Case1

5

℃

/W

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