AP13N50T2 datasheet(1/8 Pages) APME

No de pièce	AP13N50T2

Description	500V N-Channel Enhancement Mode MOSFET

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Fabricant	APME [A POWER MICROELECTRONICS]

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AP13N50T2

500V N-Channel Enhancement Mode MOSFET

AP13N50T2 REV1.0

永源微電子科技有限公司

Description

The AP13N50T2 is silicon N-channel Enhanced

VDMOSFETs, is obtained by the self-aligned planar Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency.

General Features

VDS = 500V ID =13A

RDS(ON) < 500mΩ @ VGS=10V （Type：420mΩ）

Application

Uninterruptible Power Supply(UPS)

Power Factor Correction (PFC)

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP13N50T2

TO-262-3L

AP13N50T2 XXX YYYY

1000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Value

Unit

VDSS

Drain-Source Voltage (VGS = 0V)

500

V

ID@TC=25℃

Continuous Drain Current, VGS @ 10V

13

A

ID@TC=100℃

Continuous Drain Current, VGS @ 10V

9.2

A

IDM

Pulsed Drain Current

(note1)

52

A

VGS

Gate-Source Voltage

±30

V

EAS

Single Pulse Avalanche Energy (note2)

400

mJ

IAS

Avalanche Current (note1)

13

A

PD

Power Dissipation (TC = 25ºC)

31

W

TJ, Tstg

Operating Junction and Storage Temperature Range

-55~+150

ºC

RthJC

Thermal Resistance, Junction-to-Case

3.92

ºC/W

RthJA

Thermal Resistance, Junction-to-Ambient

62.5

ºC/W

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AP13N50T2 Fiches technique(PDF) 1 Page - A POWER MICROELECTRONICS

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