AP9N20HD datasheet(1/7 Pages) APME

No de pièce	AP9N20HD

Description	200V N-Channel Enhancement Mode MOSFET

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Fabricant	APME [A POWER MICROELECTRONICS]

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AP9N20HD

200V N-Channel Enhancement Mode MOSFET

AP9N20HD REV1.0

永源微電子科技有限公司

Description

The AP9N20HD is silicon N-channel Enhanced

VDMOSFETs, is obtained by the self-aligned planar Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency.

General Features

VDS = 200V ID =9A

RDS(ON) < 300mΩ @ VGS=10V （Type：230mΩ）

Application

Uninterruptible Power Supply(UPS)

Power Factor Correction (PFC)

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP9N20HD

TO-252-3L

AP9N20HD XXX YYYY

2500

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Value

Unit

VDSS

Drain-Source Voltage (VGS = 0V)

200

V

ID

Continuous Drain Current

9

A

IDM

Pulsed Drain Current

(note1)

36

A

VGS

Gate-Source Voltage

±20

V

EAS

Single Pulse Avalanche Energy (note2)

100

mJ

IAR

Avalanche Current (note1)

7.5

A

EAR

Repetitive Avalanche Energy note1)

8.1

mJ

PD

Power Dissipation (TC = 25ºC)

74

W

TJ, Tstg

Operating Junction and Storage Temperature Range

-55~+150

ºC

RthJC

Thermal Resistance, Junction-to-Case

1.7

ºC/W

RthJA

Thermal Resistance, Junction-to-Ambient

62.5

ºC/W

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