AP8P03MSI datasheet(1/7 Pages) APME

No de pièce	AP8P03MSI

Description	-30V P-Channel Enhancement Mode MOSFET

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AP8P03MSI

-30V P-Channel Enhancement Mode MOSFET

AP8P03MSI REV1.0

永源微電子科技有限公司

Description

The AP8P03MSI uses advanced Trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = -30V ID =-8.2A

RDS(ON) < 40mΩ @ VGS=10V (Type：33mΩ)

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP8P03MSI

SOT223-3L

AP8P03MSI XXX YYYY

3000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Max.

Units

VDSS

Drain-Source Voltage

-30

V

VGSS

Gate-Source Voltage

±20

V

ID@TC=25

℃

Continuous Drain Current, VGS @ -10V1

-8.2

A

ID@TC=100

℃

Continuous Drain Current, VGS @ -10V1

-6.2

A

IDM

Pulsed Drain Current note1

-18.4

A

PD

Power Dissipation TA = 25

℃

2.15

W

TJ, TSTG

Operating and Storage Temperature Range

-55 to +150

℃

RθJA

Thermal Resistance, Junction to Ambient

125

℃/W

RθJC

Thermal Resistance from Junction to Ambient2

104

℃/W

Numéro de pièce similaire - AP8P03MSI

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A POWER MICROELECTRONIC...	AP8P03LI	1Mb / 7P	-30V P-Channel Enhancement Mode MOSFET

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