AP5N06AI datasheet(1/7 Pages) APME

No de pièce	AP5N06AI

Description	60V N-Channel Enhancement Mode MOSFET

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Fabricant	APME [A POWER MICROELECTRONICS]

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AP5N06AI

60V N-Channel Enhancement Mode MOSFET

AP5N06AI REV1.0

永源微電子科技有限公司

Description

The AP5N06AI uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 60V ID =5A

RDS(ON) <55mΩ @ VGS=10V（Type：42mΩ）

Application

LED lamp

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP5N06AI

SOT23L

5N06A

3000

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)

Symbol

Parameter

Max.

Units

VDSS

Drain-Source Voltage

60

V

VGSS

Gate-Source Voltage

±20

V

ID@TC=25

℃

Continuous Drain Current, VGS @ 10V1

5

A

ID@TC=100

℃

Continuous Drain Current, VGS @ 10V1

3.8

A

IDM

Pulsed Drain Current

15

A

EAS

Single Pulsed Avalanche Energy

9.3

mJ

PD@TC=25

℃

Power Dissipation

24

W

TJ, TSTG

Operating and Storage Temperature Range

-55 to +175

℃

RθJA

Thermal Resistance Junction-Ambient 1

125

℃/W

RθJC

Thermal Resistance Junction-Case1

6.3

℃/W

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AP5N06AI Fiches technique(PDF) 1 Page - A POWER MICROELECTRONICS

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