AP3P10DF datasheet(1/7 Pages) APME

No de pièce	AP3P10DF

Description	-100V P-Channel Enhancement Mode MOSFET

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Fabricant	APME [A POWER MICROELECTRONICS]

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AP3P10DF

-100V P-Channel Enhancement Mode MOSFET

AP3P10DF REV1.1

永源微電子科技有限公司

Description

The AP3P10DF uses advanced SGT I technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = -100V ID =-3.0A

RDS(ON) <550mΩ @ VGS=10V (Type：420mΩ)

Application

Brushless motor

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP3P10DF

PDFN3X3-8L

AP3P10DF XXX YYYY

5000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

-100

V

VGS

Gate-Source Voltage

±

20

V

ID@TC=25℃

Continuous Drain Current, VGS @ -10V1

-3.0

A

ID@TC=100℃

Continuous Drain Current, VGS @ -10V1

-1.7

A

IDM

Pulsed Drain Current2

-16

A

PD@TC=25℃

Total Power Dissipation4

1.5

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

125

℃

/W

RθJC

Thermal Resistance Junction-Case1

6.45

℃

/W

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