AP01P06AI datasheet(1/7 Pages) APME

No de pièce	AP01P06AI

Description	-60V P-Channel Enhancement Mode MOSFET

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Fabricant	APME [A POWER MICROELECTRONICS]

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AP01P06AI

-60V P-Channel Enhancement Mode MOSFET

AP01P06AI REV1.0

永源微電子科技有限公司

Description

The AP01P06AI uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = -60V ID =-0.15A

RDS(ON) < 4500mΩ @ VGS=-10V （Type：3500mΩ）

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP01P06AI

SOT23L

01P06

3000

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

-60

V

VGS

Gate-Source Voltage

±

20

V

ID@TA=25℃

Continuous Drain Current, VGS @ -10V1

-0.15

A

ID@TA=70℃

Continuous Drain Current, VGS @ -10V1

-0.1

A

IDM

Pulsed Drain Current2

-0.45

A

PD@TA=25℃

Total Power Dissipation3

1.0

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

125

℃

/W

RθJC

Thermal Resistance Junction-Case1

80

℃

/W

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