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SCT027TO65G3 Fiches technique(PDF) 4 Page - STMicroelectronics

No de pièce SCT027TO65G3
Description  Silicon carbide Power MOSFET 650 V, 29 mΩ typ., 60 A in a TO-LL package
PDF  15 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

SCT027TO65G3 Fiches technique(HTML) 4 Page - STMicroelectronics

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Table 7. Reverse SiC diode characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD(1)
Continuous diode forward current
TC = 25 °C
-
60
A
TC = 100 °C
-
60
VSD
Diode forward voltage
ISD = 30 A, VGS = 0 V
-
2.73
V
trr
Reverse recovery time
ISD = 30 A, 1 kA/μs, VDD = 400 V
-
15.4
ns
Qrr
Reverse recovery charge
-
85.2
nC
IRRM
Reverse recovery current
-
9.2
A
1. Limited by bonding wires.
SCT027TO65G3
Electrical characteristics
DS14846 - Rev 2
page 4/15



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